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US 2014/0235035 A1Published application
Methods of Forming Semiconductor Devices
AssigneeInfineon Technologies AG
InventorsGudrun Stranzl, Martin Zgaga, Markus Kahn, Guenter Denifl
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Abstract
In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.
Claims26
A method of forming a semiconductor device, the method comprising:
- forming a plurality of active elements in a semiconductor substrate;
- forming metallization over the plurality of active elements to form a plurality of devices;
- forming openings in the substrate, the openings surrounding each of the plurality of devices;
- and
- forming a dummy plug within the openings.
2 more elements
A method of forming a semiconductor device, the method comprising:
- forming openings in a substrate;
- forming a dummy fill material within the openings;
- attaching the substrate to a carrier;
- thinning the substrate to expose the dummy fill material in the openings;
- placing the substrate over a tape;
- removing the carrier after placing the substrate over the tape;
- and
- singulating the substrate by removing the dummy fill material in the openings, wherein the dummy fill material is removed after removing the carrier.
5 more elements
A method of forming a semiconductor device, the method comprising:
- forming openings in a substrate;
- forming a dummy fill material within the openings;
- forming a dummy plug by removing the dummy fill material from over a top surface of the substrate before thinning the substrate;
- thinning the substrate to expose the dummy fill material in the openings;
- and
- singulating the substrate by removing the dummy fill material in the openings.
3 more elements
A method of forming a semiconductor device, the method comprising:
- providing a substrate comprising openings, wherein a dummy fill material is disposed within the openings;
- thinning the substrate to expose the dummy fill material;
- singulating the substrate by removing the dummy fill material;
- and
- forming a back side metallization layer over a back side of the substrate after thinning, wherein the back side metallization layer is formed after removing the dummy fill material.
2 more elements
Dependencies are inferred from the claim text.