Semiconductor device and method of manufacturing semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorsTaiji Ema, Kazushi Fujita, Junji Oh
Life of this patent
Estimating the term…
Abstract
The semiconductor device includes a first transistor including a first impurity layer containing boron or phosphorus, a first epitaxial layer formed above the first impurity layer, a first gate electrode formed above the first epitaxial layer with a first gate insulating film formed therebetween and first source/drain regions, and a second transistor including a second impurity layer containing boron and carbon, or arsenic or antimony, a second epitaxial layer formed above the second impurity layer, a second gate electrode formed above the second epitaxial layer with a second gate insulating film thinner than the first gate insulating film formed therebetween, and second source/drain regions.
Claims8
A method of manufacturing a semiconductor device comprising:
- forming a first impurity layer in a first region of a semiconductor substrate by implanting a first impurity of a first conductivity type in the first region;
- forming a second impurity layer in a second region of the semiconductor substrate by implanting a second impurity of the first conductivity type in the second region or implanting the first impurity and a third impurity which suppresses a diffusion of the first impurity in the second region, a diffusion constant of the second impurity being smaller than a diffusion constant of the first impurity;
- forming a semiconductor layer above the semiconductor substrate after forming the second impurity layer;
- forming a first gate insulating film above the semiconductor layer in the first region and the second region;
- removing the first gate insulating film in the second region;
- forming a second gate insulating film thinner than the first gate insulating film above the semiconductor layer in the second region;
- and
- forming a first gate electrode above the first gate insulating film and a second gate electrode above the second gate insulating film.
Dependencies are inferred from the claim text.