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US 2014/0235019 A1Published application
Decoupling MIM Capacitor Designs for Interposers and Methods of Manufacture Thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Chyuan Tzeng, Kuo-Chi Tu, Chen-Jong Wang, Hsiang-Fan Lee
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Abstract
Decoupling metal-insulator-metal (MIM) capacitor designs for interposers and methods of manufacture thereof are disclosed. In one embodiment, a method of forming a decoupling capacitor includes providing a packaging device, and forming a decoupling MIM capacitor in at least two metallization layers of the packaging device.
Claims20
A method for forming a semiconductor device, the method comprising:
- providing an interposer, the interposer having a first plurality of contact pads and a second plurality of contact pads, the interposer having a decoupling metal-insulator-metal (MIM) capacitor formed thereon, wherein the decoupling MIM capacitor comprises a bottom electrode, a capacitor dielectric over the bottom electrode, and a top electrode over the capacitor dielectric;
- and
- mounting an integrated circuit die to the second plurality of contact pads, the decoupling MIM capacitor being electrically interposed between the integrated circuit die and a first contact pad of the first plurality of contact pads.
A method for forming a semiconductor device, the method comprising:
- providing an interposer, the interposer comprising:
- a first contact pad on a first side of the interposer and a second contact pad on a second side of the interposer, the first contact pad being electrically coupled to the second contact pad;
- and
- a decoupling metal-insulator-metal (MIM) capacitor, the decoupling MIM capacitor being electrically coupled between the first contact pad and the second contact pad, wherein the decoupling MIM capacitor comprises a bottom electrode, a capacitor dielectric over the bottom electrode, and a top electrode over the capacitor dielectric;
- and
- electrically coupling an integrated circuit die to the first contact pad on the interposer.
3 more elements
A method for forming a semiconductor device, the method comprising:
- providing an interposer, the interposer comprising:
- a substrate;
- one or more metallization layers over the substrate;
- a decoupling metal-insulator-metal (MIM) capacitor in the one or more metallization layers, the decoupling MIM capacitor having a first electrode, a second electrode, and a dielectric layer interposed between the first electrode and the second electrode;
- a first contact pad electrically coupled to the first electrode;
- and
- a second contact pad electrically coupled to the second electrode;
- and
- electrically coupling an integrated circuit die to the first contact pad.
6 more elements
Dependencies are inferred from the claim text.