Method for manufacturing a metal-insulator-semiconductor (mis) structure for an electroluminescent diode

A method for manufacturing a structure comprising a substrate made of at least one n-type semiconducting metal oxide selected from the group consisting of ZnO, CdO, MgO, ZnMgO, and ZnCdO, wherein said substrate comprises a first main surface and a second main surface, wherein the first main surface of the substrate is covered with a layer made of an electrically insulating material, and the layer made of an electrically insulating material is covered with at least one layer made of an electrically conductive material, the method comprising:

• providing a substrate made of at least one n-type semiconducting metal oxide selected from the group consisting of ZnO, CdO, MgO, ZnMgO, and ZnCdO, wherein the doping rate of which is less than or equal to 1018/cm3;
• depositing a layer which is 1 to 10 nm thick, made of an electrically insulating metal or metalloid oxide, having a dielectric constant which is at least equal to 4, on the first main surface of the substrate;
• annealing the electrically insulating metal or metalloid oxide layer in an oxygen atmosphere;
• and
• depositing at least one layer made of an electrically conductive material on the electrically insulating metal or metalloid oxide layer.