Ohmic contacts for semiconductor structures
AssigneeMicron Technology, Inc.
InventorsYongjun Jeff Hu, John Mark Meldrim, Shanming Mou, Everett Allen McTeer
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Abstract
A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
Claims20
A method for formation of an ohmic contact, the method comprising:
- obtaining or providing a semiconductor structure;
- depositing a TiAlxNy material contiguous to at least part of the semiconductor structure, wherein the depositing comprises at least one of atomic layer deposition, physical vapor deposition, and chemical vapor deposition, wherein the TiAlxNy material is formed by the depositing prior to any subsequent annealing,
- wherein x and y do not simultaneously equal zero, and when y equals zero x does not equal one;
- and
- annealing the semiconductor structure and the TiAlxNy material to form an ohmic contact.
A method for formation of an ohmic contact, the method comprising:
- obtaining or providing a semiconductor structure comprising an n-doped GaN material;
- depositing a TiAlx material about 200 angstroms to about 2000 angstroms thick contiguous to at least part of the n-doped GaN material, wherein the depositing comprises at least one of atomic layer deposition, physical vapor deposition, and chemical vapor deposition, wherein the TiAlx material is formed by the depositing prior to any subsequent annealing,
- wherein x and y do not simultaneously equal zero, when y equals zero x does not equal one, and wherein x is about 3;
- and
- annealing the semiconductor structure and the TiAlx material at or less than approximately 660° C. to 800° C. for a duration of about 30 seconds to about 60 seconds to form an ohmic contact.
A method for formation of an ohmic contact, the method comprising:
- obtaining or providing a semiconductor structure comprising an n-doped GaN material;
- depositing a TiAlx material about 50 angstroms to about 200 angstroms thick contiguous to at least part of the n-doped GaN material, wherein the depositing comprises at least one of atomic layer deposition, physical vapor deposition, and chemical vapor deposition, wherein the TiAlx material is formed by the depositing prior to any subsequent annealing,
- wherein x and y do not simultaneously equal zero, when y equals zero x does not equal one, and wherein x is about 3;
- depositing an aluminum material about 1000 angstroms thick contiguous to at least part of the TiAlx material, such that the TiAlx material is between the aluminum material and the n-doped GaN material;
- and
- annealing the semiconductor structure and the TiAlx material and the aluminum material at or less than about 660° C. for a duration of about 30 to about 60 seconds to form an ohmic contact.
Dependencies are inferred from the claim text.