Inspection method for semiconductor light-emitting device and manufacturing method for semiconductor light-emitting device

Abstract

An inspection method for a semiconductor light-emitting device includes an image capturing step for capturing an image of photoluminescence released from the active layer, an inspection region extracting step for extracting an inspection region from the captured image; a luminance average determination step for, determining the semiconductor light emitting device as defective when a luminance average is smaller than a predetermined threshold, a luminance variance determination step for determining the semiconductor light emitting device as defective when a luminance variance is larger than a predetermined threshold, a color determination step for determining the semiconductor light-emitting device as defective when a pixel in which a color component indicating a photoluminescence intensity of light released from the active layer and having a wavelength shorter than the original emitting wavelength, and a total determination step for totally determining the semiconductor light-emitting device as defective when determined in at least one of these determination results within the inspection region.

Dependencies are inferred from the claim text.