US 2014/0234992 A1 · PLASMA ETCHING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Abstract

A plasma etching method is provided for etching a substrate corresponding to an etching object within an etching apparatus that includes a supply condition adjustment unit for adjusting a supply condition for supplying etching gas to the substrate, a temperature adjustment unit for adjusting a temperature of the substrate placed on a stage along a radial direction, and a plasma generating unit for generating plasma within a space between the supply condition adjustment unit and the stage. The plasma etching method includes a control step in which the temperature adjustment unit controls the temperature of the substrate to be uniform within a substrate plane of the substrate, and an adjustment step in which the supply condition adjustment unit adjusts a concentration distribution of active species contained in the plasma generated by the plasma generation unit within the space above the substrate.

Claims10

Dependent claims

A plasma etching method for etching a substrate corresponding to an etching object within an etching apparatus that includes a supply rate adjustment unit for adjusting a supply rate of etching gas supplied to the substrate, a temperature adjustment unit for adjusting a temperature of the substrate placed on a stage along a radial direction, and a plasma generating unit for generating plasma within a space between the supply rate adjustment unit and the stage, the plasma etching method comprising:

a control step in which the temperature adjustment unit controls the temperature of the substrate to be uniform within a substrate plane of the substrate at a first temperature;
and
an adjustment step in which the supply rate adjustment unit adjusts a concentration distribution of active species contained in the plasma generated by the plasma generation unit within the space above the substrate.

A plasma etching method for etching a substrate that includes a first wiring layer on which an insulating layer and a metal layer are successively formed, a metal mask layer having a first opening for defining a trench for a second wiring layer, and a second mask layer having a second opening that is smaller than the first opening for defining a via for interconnecting the first wiring layer and the second wiring layer, the first opening being formed by etching the metal layer formed on the first wiring layer, and the second opening being formed by etching a planarization layer arranged on the insulating layer and covering the metal mask layer, the plasma etching method comprising:

a first etching step of performing plasma etching on the insulating layer using the second mask layer and forming an opening having a depth that is less than a thickness of the insulating layer within a plasma etching apparatus;
and
a second etching step of performing plasma etching on the insulating film using the metal mask layer to form the trench and deepening the opening to form the via within the same plasma etching apparatus;
wherein the first etching step and the second etching step include adjusting an etching gas supply condition according to whether a supply position on the substrate corresponds to a position where an effect of diffusion of supplied etching gas is greater than an effect of flow of supplied etching gas, or a position where an effect of flow of supplied etching gas is greater than an effect of diffusion of supplied etching gas.

1 more element

Dependencies are inferred from the claim text.

Plasma etching method and semiconductor device manufacturing method

Life of this patent

Plasma etching method and semiconductor device manufacturing method

Life of this patent

Abstract

Claims10