Rolled-up, three-dimensional field-effect transistors and the use thereof in electronics, sensors and microfluidics
AssigneeLeibniz-Institut Fuer Festkoerper-Und Werkstoffforschung Dresden E.V.
InventorsDaniel GRIMM, Oliver G. SCHMIDT, Carlos Cesar Bof BUFON
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Abstract
Field-effect transistors include at least two thin layers of a semiconductor material and of an electrically conductive gate material that are rolled up together. These two layers are arranged separated from one another by one or multiple barrier layers and this rolled-up multi-layer structure is integratable as field-effect transistors in circuits and/or in microfluid systems as sensors for the detection of fluids.
Claims13
Field-effect transistors composed of at least two thin layers of a semiconductor material (1) and of an electrically conductive gate material (2) rolled up together, wherein these two layers are arranged separated from one another by one or multiple barrier layers (3) and wherein this rolled-up multi-layer structure is integrated as field-effect transistors in circuits and/or in microfluid systems as sensors for the detection of fluids.
Dependencies are inferred from the claim text.