Pattern forming process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Tsutomu Ogihara, Yusuke Biyajima
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Abstract
A pattern is formed by coating a chemically amplified resist composition comprising a resin having a dissolution rate in an organic solvent developer that lowers under the action of acid onto a processable substrate, prebaking, exposing the resist film, PEB, developing in an organic solvent developer to form a negative pattern, coating a solution comprising Si, Ti, Zr, Hf or Al, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern.
Claims16
A pattern forming process comprising the steps of:
- coating a chemically amplified resist composition comprising a resin having a dissolution rate in an organic solvent developer that lowers under the action of acid, a photoacid generator capable of generating an acid upon exposure to high-energy radiation, and a first organic solvent, onto a processable substrate,
- prebaking the coating to remove the unnecessary solvent and to form a resist film,
- exposing patternwise the resist film to high-energy radiation,
- post-exposure baking,
- developing in an organic solvent developer to form a negative pattern,
- coating a solution comprising an element selected from the group consisting of silicon, titanium, zirconium, hafnium, and aluminum onto the negative pattern-bearing substrate,
- prebaking, and
- dry etching to effect image reversal for converting the negative pattern into a positive pattern.
A pattern forming process comprising the steps of:
- coating a chemically amplified resist composition comprising a resin having a dissolution rate in an organic solvent developer that lowers under the action of acid, a photoacid generator capable of generating an acid upon exposure to high-energy radiation, and a first organic solvent, onto a processable substrate,
- prebaking the coating to remove the unnecessary solvent and to form a resist film,
- exposing patternwise the resist film to high-energy radiation,
- post-exposure baking,
- developing in an organic solvent developer,
- coating a solution comprising an element selected from the group consisting of silicon, titanium, zirconium, hafnium, and aluminum at the end of development,
- prebaking, and
- dry etching to effect image reversal for converting a negative pattern into a positive pattern.
Dependencies are inferred from the claim text.