Back to results
US 2014/0234783 A1Published application
Rinse solution for lithography and pattern formation method employing the same
AssigneeAZ Electronic Materials USA Corp.
InventorsXiaowei Wang, Georg Pawlowski, Yuriko Matsuura
Life of this patent
Estimating the term…
Abstract
The present invention provides a rinse solution for lithography and a pattern formation method using the solution. They can improve the pattern collapse, surface roughness and surface defects. The solution contains at least a sulfonic acid a nonionic surfactant having an alkyleneoxy group and water.
Claims19
A rinse solution for lithography, which comprises at least a sulfonic acid, a nonionic surfactant having an alkyleneoxy group, and water.
Dependencies are inferred from the claim text.