Photo resist (pr) profile control
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi Huai YANG, Chien-Mao CHEN
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Abstract
One or more techniques or systems for controlling a profile for photo resist (PR) are provided herein. In some embodiments, a first shield layer is formed on a first PR layer and a second PR layer is formed on the first shield layer. A first window is formed within the second PR layer during a first exposure with a mask. A second window is formed within the first shield layer based on the first window. A third window is formed within the first PR layer during a second exposure without a mask. Because, the third window is formed while the first shield layer and the second PR layer are on the first PR layer, a profile associated with the first PR layer is controlled. Contamination during ion bombardment is mitigated due to the controlled profile.
Claims20
A method for controlling a profile of photo resist (PR) structure, comprising:
- forming a first photo resist (PR) layer on a base material;
- forming a first shield layer on the first PR layer;
- forming a second PR layer on the first shield layer;
- forming a first window within the second PR layer;
- forming a second window within the first shield layer based on the first window within the second PR layer;
- and
- forming a third window within the first PR layer based on the second window within the second PR layer, thereby controlling a profile associated with the first PR layer.
A method for controlling a profile for a photo resist (PR) structure, comprising:
- forming a first shield layer on a base material;
- forming a second PR layer on the first shield layer;
- forming a first window within the second PR layer;
- and
- forming a second window within the first shield layer based on the first window within the second PR layer, thereby controlling a profile associated with the first shield layer.
A photo resist (PR) structure with a substantially vertical profile, comprising:
- a first photo resist (PR) region;
- a first shield region on the first PR region;
- and
- a second PR region on the first shield region.
Dependencies are inferred from the claim text.