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US 2014/0234755 A1Published application
Mask blank substrate, mask blank, reflective mask blank, transfer mask, reflective mask, and methods of manufacturing the same
AssigneeHoya Corporation
InventorsTatsuya Sasaki, Takahito Nishimura
Life of this patent
Estimating the term…
Abstract
A mask blank substrate is provided with a substrate mark comprising an oblique section. The inclination angle of the substrate mark with respect to a main surface is greater than 45° and less than 90° and the distance from the boundary between the main surface and the substrate mark to the outer periphery of the mask blank substrate is less than 1.5 mm.
Claims26
A mask blank substrate which is a thin sheet-like substrate comprising:
- two main surfaces;
- four side surfaces;
- an R-surface formed between the adjacent side surfaces;
- and a chamfered surface formed between the main surface and the side surfaces,
- wherein the substrate has a substrate mark of an oblique section shape formed across the main surface or the chamfered surface and the R-surface, and
- wherein the substrate mark is such that a maximum value of a distance is less than 1.5 mm, where the distance is measured on a virtual plane including a central portion of the main surface and measured from an arbitrary point on a boundary line between the substrate mark and the main surface or the chamfered surface to a boundary between the substrate mark and the R-surface in a direction perpendicular to the boundary line.
3 more elements
A mask blank substrate which is a thin sheet-like substrate comprising:
- two main surfaces;
- four side surfaces;
- an R-surface formed between the adjacent side surfaces;
- and a chamfered surface formed between the main surface and the side surfaces,
- wherein the substrate has a substrate mark of an oblique section shape formed across the main surface or the chamfered surface and the R-surface, and
- wherein the substrate mark is such that a boundary between the substrate mark and the main surface or the chamfered surface is located on a boundary between the main surface and the chamfered surface or on a peripheral area placed outside of the boundary between the main surface and the chamfered surface and an inclination angle of the substrate mark with respect to the main surface is greater than 45° and less than 90°.
3 more elements
A method of manufacturing a mask blank substrate, comprising:
- a substrate mark forming step of, with respect to a thin sheet-like substrate comprising two main surfaces, four side surfaces, an R-surface formed between the adjacent side surfaces, and a chamfered surface formed between the main surface and the side surfaces, forming a substrate mark of an oblique section shape across the main surface or the chamfered surface and the R-surface;
- and
- a polishing step of polishing both main surfaces of the substrate using a polishing liquid containing polishing abrasive particles,
- wherein the substrate mark is formed so that a maximum value of a distance is less than 1.5 mm, where the distance is measured on a virtual plane including a central portion of the main surface and measured from an arbitrary point on a boundary line between the substrate mark and the main surface or the chamfered surface to a boundary between the substrate mark and the R-surface in a direction perpendicular to the boundary line.
1 more element
A method of manufacturing a mask blank substrate, comprising:
- a substrate mark forming step of, with respect to a thin sheet-like substrate comprising two main surfaces, four side surfaces, an R-surface formed between the adjacent side surfaces, and a chamfered surface formed between the main surface and the side surfaces, forming a substrate mark of an oblique section shape across the chamfered surface and the R-surface;
- and
- a polishing step of polishing both main surfaces of the substrate using a polishing liquid containing polishing abrasive particles,
- wherein the substrate mark is formed so that a boundary between the substrate mark and the main surface or the chamfered surface is located on a boundary between the main surface and the chamfered surface or on a peripheral area placed outside of the boundary between the main surface and the chamfered surface and an inclination angle of the substrate mark with respect to the main surface is greater than 45° and less than 90°.
1 more element
Dependencies are inferred from the claim text.