US 2014/0234664 A1 · PEELING METHOD, SEMICONDUCTOR DEVICE, AND PEELING APPARATUS

Abstract

To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.

Claims18

Dependent claims

A peeling method comprising:

a first step of forming a peeling layer over a support substrate, the peeling layer comprising tungsten;
a second step of forming a layer to be peeled over the peeling layer and of forming an oxide layer comprising tungsten oxide between the peeling layer and the layer to be peeled, the layer to be peeled comprising a stack including a first layer comprising silicon oxynitride and a second layer comprising silicon nitride in this order;
a third step of forming a compound comprising tungsten and nitrogen in the oxide layer by heat treatment;
and
a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.

2 more elements

Dependencies are inferred from the claim text.

Peeling method, semiconductor device, and peeling apparatus

Life of this patent

Peeling method, semiconductor device, and peeling apparatus

Life of this patent

Abstract

Claims18