Growth of graphene films from non-gaseous carbon sources
AssigneeWilliam Marsh Rice University
InventorsJames Tour, Zhengzong Sun, Zheng Yan, Gedeng Ruan, Zhiwei Peng
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Abstract
In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.
Claims41
A method of forming a graphene film, wherein the method comprises:
- a. depositing a non-gaseous carbon source onto a catalyst surface;
- b. exposing the non-gaseous carbon source to at least one gas, wherein the at least one gas comprises a gas flow rate;
- and
- c. initiating the conversion of the non-gaseous carbon source to the graphene film, wherein the thickness of the graphene film is controllable by the gas flow rate.
A graphene film made by the process of:
- a. depositing a non-gaseous carbon source onto a catalyst surface;
- and
- b. exposing the non-gaseous carbon source to at least one gas, wherein the at least one gas comprises a gas flow rate;
- and
- c. initiating the conversion of the non-gaseous carbon source to the graphene film, wherein the thickness of the graphene film is controllable by the gas flow rate.
Dependencies are inferred from the claim text.