Memory system and programming method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-Won Shim, Sang-Wan Nam, Kitae Park
Life of this patent
Estimating the term…
Abstract
A program method of a nonvolatile memory device is provided, which includes programming a memory cell in one string selected from a plurality of vertical strings; determining whether a mode of operation of the nonvolatile memory device is a pre-pulse mode; when the mode of operation is determined to be the pre-pulse mode, applying a pre-pulse having a predetermined level to a string selection line connected with a gate of a string selection transistor of at least one unselected vertical string of the plurality of vertical strings for a particular time period; and performing a verification operation on the programmed memory cell.
Claims20
A program method of a nonvolatile memory device in which a plurality of strings are connected to a bit line, each string including at least one string selection transistor, a plurality of memory cells, and at least one ground selection transistor formed in a direction perpendicular to a substrate, the program method comprising:
- programming a memory cell in a first string selected from the plurality of strings;
- determining whether a mode of operation of the nonvolatile memory device is a pre-pulse mode;
- when the mode of operation is determined to be the pre-pulse mode, applying a pre-pulse having a particular level to a string selection line connected with a gate of a string selection transistor of at least one unselected string of the plurality of strings for a particular time period;
- and
- performing a verification operation on the programmed memory cell.
A memory system, comprising:
- at least one nonvolatile memory device including memory blocks where a plurality of strings connected with a bit line is formed in a direction perpendicular to a substrate;
- and
- a memory controller configured to control the at least one nonvolatile memory device,
- wherein the at least one nonvolatile memory device includes a pre-pulse controller to control a pre-pulse according to pre-pulse mode information;
- and
- wherein the pre-pulse is applied to unselected string selection lines during a particular time period to remove boosting channels of unselected strings of the plurality of strings.
A controller for controlling whether to apply a pre-pulse to unselected string selection lines of a nonvolatile memory device in which a plurality of strings are connected to a bit line, each string including at least one string selection transistor, a plurality of memory cells, and at least one ground selection transistor formed in a direction perpendicular to a substrate, the controller configured to:
- determine whether to apply a pre-pulse to at least one unselected string selection line of the nonvolatile memory device;
- when it is determined to apply the pre-pulse, apply the pre-pulse to the string selection line at a read mode or write mode of operation;
- and
- when it is determined not to apply the pre-pulse, not apply the pre-pulse to the string selection line at a read mode or write mode of operation,
- wherein the determination is based on one or more of:
- an instruction indicating that a pre-pulse mode should be used;
- and a metric associated with the programming of the memory device.
Dependencies are inferred from the claim text.