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US 2014/0233305 A1Published application
Magnetic random access memory having increased on/off ratio and methods of manufacturing and operating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHo-jung KIM, Hyun-sik CHOI
Life of this patent
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Abstract
A magnetic random access memory (MRAM), and methods of manufacturing and operating the MRAM, include a switching element and a storage node connected to the switching element, and a magnetic node configured to simultaneously store two opposite bits.
Claims18
A magnetic random access memory (MRAM), comprising:
- a switching element;
- and
- a storage node connected to the switching element,
- wherein the storage node includes a magnetic node configured to simultaneously store two opposite bits.
1 more element
A method of operating a magnetic random access memory (MRAM), the method comprising:
- applying an operational current to a magnetic node of the MRAM through two different paths,
- wherein the MRAM includes,
- a switching element, and
- a storage node connected to the switching element and including the magnetic node,
- the magnetic node is configured to store opposite first and second bit data.
2 more elements
A method of manufacturing a magnetic random access memory (MRAM), the method comprising:
- forming a switching element on a substrate;
- forming a storage node connected to the switching element, wherein the storage node is configured to store opposite first and second bit data;
- and
- forming first and bit lines each connected to the storage node.
1 more element
Dependencies are inferred from the claim text.