Set/Reset Algorithm Which Detects And Repairs Weak Cells In Resistive-Switching Memory Device

A memory device, comprising:

• a resistance switching material between first and second electrodes;
• a first control line connected to the first electrode;
• a second control line connected to the second electrode;
• and
• a control circuit connected to the first and second control lines, the control circuit, to perform a first programming phase, applies one or more program voltages to the resistance switching material until the resistance switching material passes a program verify test, in response to the resistance switching material passing the program verify test in the first programming phase, performs a stability test phase in which one or more disturb voltages are applied to the resistance switching material and a stability verify test is performed for the resistance switching material.

A method for performing an operation to change a resistance state of a memory cell, comprising:

• performing a first programming phase by applying one or more program voltages to the memory cell until the memory cell passes a program verify test, the memory cell comprises a resistance-switching material;
• in response to the memory cell passing the program verify test in the first programming phase, performing a stability test phase by applying multiple disturb voltages to the memory cell and performing a stability verify test multiple times for the memory cell;
• determining a number of times the memory cell passes the stability verify test in the stability test phase;
• based on the number of times the memory cell passes the stability verify test in the stability test phase, determining whether further programming of the memory cell is warranted;
• if further programming of the memory cell is warranted, performing a second programming phase by applying one or more program voltages to the memory cell and performing the program verify test;
• and
• if further programming of the memory cell is not warranted, concluding the operation without performing the second programming phase.