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US 2014/0233296 A1Published application
Ferroelectric memory device and method for manufacturing same
AssigneeSeoul National University R&Db Foundation
InventorsTae Won Noh, Daesu Lee, Jong-Gul Yoon
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Abstract
The present application relates to a ferroelectric memory device having a multilevel polarization (MLP) state generated due to adjustment of a displacement current and to a method for manufacturing the ferroelectric memory device.
Claims18
A ferroelectric memory device, comprising:
- a ferroelectric capacitor;
- and
- a current limiter including a transistor which is electrically connected to the ferroelectric capacitor,
- wherein the ferroelectric capacitor includes a multilevel polarization state during a polarization switching process of the ferroelectric capacitor
1 more element
A manufacturing method for a ferroelectric memory device, comprising:
- forming a ferroelectric capacitor;
- and
- forming a current limiter including a transistor which is electrically connected to the ferroelectric capacitor.
Dependencies are inferred from the claim text.