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US 2014/0233294 A1Published application
Memory Cell with Decoupled Read/Write Path
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Wei Ting, Kuo-Ching Huang, Chun-Yang Tsai
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Abstract
A memory cell with a decoupled read/write path includes a switch comprising a first terminal connected to a first line and a second terminal connected to a second line, a resistive switching device connected between a gate of the switch and a third line, and a conductive path between the gate of the switch and the second line.
Claims20
A memory cell with a decoupled read/write path, the memory cell comprising:
- a switch comprising a gate, a first terminal connected to a first line and a second terminal connected to a second line;
- a resistive switching device connected between the gate of the switch and a third line;
- and
- a conductive path between the gate of the switch and the second line.
1 more element
A memory array comprising:
- a number of bit lines;
- a number of word lines;
- a number of source lines;
- and
- a number of memory cells, each memory cell comprising:
- a switch comprising:
- a gate;
- a first terminal connected to a source line;
- and
- a second terminal connected to a word line;
- a resistive switching device connected between the gate of the switch and a bit line;
- and
- a conductive path between the gate of the switch and the word line.
10 more elements
A method for operating a memory cell with a decoupled read/write path, the method comprising:
- to write to the memory cell, applying a voltage between a bit line connected to a first terminal of a resistive switching device within the memory cell and a word line connected to a first terminal of a switch within the memory cell, a gate of the switch being connected to a second terminal of the resistive switching device;
- and
- to read a state of the memory cell, applying a voltage between the bit line and a source line connected to a second terminal of the switch;
- wherein the memory cell comprises a conductive path between the second terminal of the resistive switching device and the first terminal of the switch.
1 more element
Dependencies are inferred from the claim text.