Permutational memory cells
AssigneeMicron Technology, Inc.
InventorScott E. Sills
Life of this patent
Estimating the term…
Abstract
Various embodiments comprise apparatuses having at least two resistance change memory (RCM) cells. In one embodiment, an apparatus includes at least two electrical contacts coupled to each of the RCM cells. A memory cell material is disposed between pairs of each of the electrical contacts coupled to each of the RCM cells. The memory cell material is capable of forming a conductive pathway between the electrical contacts with at least a portion of the memory cell material arranged to cross-couple a conductive pathway between select ones of the at least two electrical contacts electrically coupled to each of the at least two RCM cells. Additional apparatuses and methods are described.
Claims13
An apparatus comprising:
- at least one resistance change memory (RCM) cell;
- three or more electrical contacts electrically coupled to the at least one RCM cell, the three or more electrical contacts arranged laterally to one another;
- and
- a memory cell material disposed between pairs of three or more electrical contacts, the memory cell material capable of forming a conductive pathway between pairs of the three or more electrical contacts.
An apparatus, comprising:
- an electrical device;
- at least three electrical contacts coupled to the electrical device, the three contacts arranged laterally to one another and configured to be cross-coupled;
- and
- a memory cell material disposed between at least pairs of the at least three electrical contacts.
A method of operating a memory device, the method comprising:
- in a memory device having at least three electrical contacts,
- selecting a sequence in which to perform a plurality of operations on the memory device;
- selecting a first pair of the at least three electrical contacts to perform a first operation on the memory device;
- and
- selecting a subsequent pair of cross-coupled ones of the at least three electrical contacts to perform a subsequent operation on the memory device.
An apparatus comprising:
- at least three resistance change memory (RCM) cells;
- a number of electrical contacts including at least one electrical contact electrically coupled to each of the at least three RCM cells, the at least three RCM cells arranged laterally to one another;
- and
- a memory cell material disposed between at least pairs of at least one electrical contact electrically coupled to each of the at least three RCM cells, the memory cell material capable of forming a conductive pathway between the at least pairs of the electrical contacts.
Dependencies are inferred from the claim text.