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US 2014/0233152 A1Published application
Fabrication of porous silicon electrochemical capacitors
AssigneeIntel Corporation
InventorsDonald S. Gardner, Cary L. Pint, Charles W. Holzwarth, Wei Jin, Zhaohui Chen, Yang Liu, Eric C. Hannah, John L. Gustafson
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Abstract
Methods of forming microelectronic structures are described. Embodiments of those methods may include forming an electrochemical capacitor device by forming pores in low-purity silicon materials. Various embodiments described herein enable the fabrication of high capacitive devices using low cost techniques.
Claims71
A method of making a charge storage structure, the method comprising:
- forming pores in a low-purity silicon substrate to form a low purity porous silicon structure.
A method comprising:
- forming an electrochemical capacitor having a first section and a second section, wherein at least one of the first section and the second section comprises a low purity porous silicon structure;
- placing a dielectric separator between the first section and the second section, wherein the separator allows a transfer of ionic charge;
- and
- placing an electrolyte in physical contact with the electrochemical capacitor.
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A method comprising:
- forming low purity silicon particles;
- and
- forming pores in the low purity silicon particles to form low purity porous silicon particles.
A method comprising,
- forming pores in a low purity silicon substrate to form a low purity porous silicon structure;
- and
- forming low purity porous silicon particle from the low purity porous silicon structure.
A structure comprising:
- a capacitor having a first section and a second section separated by a dielectric material, wherein at least one of the first section and the second section comprises a low purity porous silicon material.
A structure comprising:
- a plurality of discrete electrodes;
- an electrolyte in physical contact with at least some of the plurality of discrete electrodes;
- and
- low purity porous silicon particles disposed on the electrodes.
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Dependencies are inferred from the claim text.