Solid-state imaging device, manufacturing method thereof, and electronic apparatus
AssigneeSony Corporation
InventorTakekazu Shinohara
Life of this patent
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Abstract
A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
Claims18
A solid-state imaging device having a backside illuminated structure, comprising:
- a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix;
- an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth;
- and
- a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
A method for manufacturing a solid-state imaging device comprising:
- forming a trench having a predetermined depth from a surface of a semiconductor substrate;
- filling a semiconductor layer in the trench by an epitaxial growth to form an element isolation region;
- forming pixels in the semiconductor substrate, each of which has a photoelectric conversion portion and a plurality of pixel transistors, to form a pixel region in which the pixels isolated by the element isolation region are arranged in a two-dimensional matrix;
- forming a multilayer wiring layer in which a plurality of layers of wires is arranged with at least one internal insulating film provided therebetween on the surface of the semiconductor substrate;
- adhering a support substrate on the multilayer wiring layer;
- and
- reducing the thickness of the semiconductor substrate so that the element isolation region is exposed to a rear surface of the semiconductor substrate and the rear surface thereof functions as a light-receiving surface.
Dependencies are inferred from the claim text.