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US 2014/0232014 A1Published application
Semiconductor device with buried bit line and method for fabricating the same
AssigneeSK hynix Inc.
InventorsHeung-Jae CHO, Bong-Seok JEON
Life of this patent
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Abstract
A semiconductor device includes: a punch stop region formed in a substrate; a plurality of buried bit lines formed over the substrate; a plurality of pillar structures formed over the buried bit lines; a plurality of word lines extending to intersect the buried bit lines and being in contact with the pillar structures; and an isolation layer isolating the word lines from the buried bit lines.
Claims6
A semiconductor device comprising:
- a punch stop region formed in a substrate;
- a plurality of buried bit lines formed over the substrate;
- a plurality of pillar structures formed over the buried bit lines;
- a plurality of word lines extending to intersect the buried bit lines and being in contact with the pillar structures;
- and
- an isolation layer isolating the word lines from the buried bit lines.
3 more elements
Dependencies are inferred from the claim text.