Backside Through Vias in a Bonded Structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWeng-Jin Wu, Ku-Feng Yang, Hung-Pin Chang, Wen-Chih Chiou, Chen-Hua Yu
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWeng-Jin Wu, Ku-Feng Yang, Hung-Pin Chang, Wen-Chih Chiou, Chen-Hua Yu
Estimating the term…
A wafer thinning system and method are disclosed that includes grinding away substrate material from a backside of a semiconductor device. A current change is detected in a grinding device responsive to exposure of a first set of device structures through the substrate material, where the grinding is stopped in response to the detected current change. Polishing repairs the surface and continues to remove an additional amount of the substrate material. Exposure of one or more additional sets of device structures through the substrate material is monitored to determine the additional amount of substrate material to remove, where the additional sets of device structures are located in the semiconductor device at a known depth different than the first set.
A method comprising:
A method comprising:
A device comprising:
Dependencies are inferred from the claim text.