Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsNorihisa Arai, Tsutomu Takahashi, Kazuo Hatakeyama, Kazuki Uchino
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AssigneeKabushiki Kaisha Toshiba
InventorsNorihisa Arai, Tsutomu Takahashi, Kazuo Hatakeyama, Kazuki Uchino
Estimating the term…
According to one embodiment, a semiconductor device includes: a semiconductor layer of a first conductivity type, the semiconductor layer having a first surface and a second surface on an opposite side to the first surface; a plurality of conductive layers extending in a direction from the first surface side toward the second surface side of the semiconductor layer; a first semiconductor region of a second conductivity type surrounding part of each of the plurality of conductive layers on the second surface side of the semiconductor layer, a portion other than a front surface of the first semiconductor region being surrounded by the semiconductor layer; and an insulating film provided between each of the plurality of conductive layers and the semiconductor layer and between each of the plurality of conductive layers and the first semiconductor region.
A semiconductor device comprising:
Dependencies are inferred from the claim text.