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US 2014/0232006 A1Published application
Device and Method for Manufacturing a Device
AssigneeInfineon Technologies Austria AG
InventorMartin Vielemeyer
Life of this patent
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Abstract
A device includes a semiconductor chip including a frontside, a backside, and a side surface extending from the backside to the frontside. The side surface includes a first region and a second region, wherein a level of the first region is different from a level of the second region. The device further includes an electrically conductive material arranged over the backside of the semiconductor chip and over the first region of the side surface, wherein the second region of the side surface is uncovered by the electrically conductive material.
Claims23
A device, comprising:
- a semiconductor chip comprising a frontside, a backside, and a side surface extending from the backside to the frontside, wherein the side surface comprises a first region and a second region, wherein a level of the first region is different from a level of the second region;
- and
- an electrically conductive material arranged over the backside of the semiconductor chip and over the first region of the side surface, wherein the second region of the side surface is uncovered by the electrically conductive material.
A method, comprising:
- providing a semiconductor wafer comprising a frontside and a backside;
- removing semiconductor material to form a first part of a trench, wherein the first part of the trench comprises a first width;
- removing semiconductor material to form a second part of the trench, wherein the second part of the trench comprises a second width smaller than the first width, wherein the trench extends from the frontside of the semiconductor wafer to the backside of the semiconductor wafer;
- and
- depositing an electrically conductive material over the backside of the semiconductor wafer.
2 more elements
A method, comprising:
- providing a semiconductor wafer comprising a frontside and a backside;
- removing semiconductor material from the frontside of the semiconductor wafer to form a first part of a trench, wherein the first part of the trench comprises a first width;
- depositing a first material over a first part of a bottom of the first part of the trench;
- and
- removing semiconductor material from a second part of the bottom of the first part of the trench, wherein the second part of the bottom is uncovered by the first material, to form a second part of the trench, wherein the second part of the trench comprises a second width smaller than the first width, wherein the trench extends from the frontside of the semiconductor wafer to the backside of the semiconductor wafer.
2 more elements
Dependencies are inferred from the claim text.