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US 2014/0232004 A1Published application
Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsYasuhiro YOSHIURA, Masayoshi TARUTANI, Eiko OTSUKI
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Abstract
The present invention includes a semiconductor substrate and a back electrode (a back multilayer electrode in the preferred embodiment) provided on a back surface of the semiconductor substrate. A rough source pattern is formed in a peripheral edge portion of the back surface of the semiconductor substrate which faces the back multilayer electrode.
Claims7
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a back electrode provided on a back surface of said semiconductor substrate;
- wherein a rough surface pattern is formed in a peripheral edge portion of said back surface of said semiconductor substrate which faces said back electrode.
1 more element
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a back electrode provided on a back surface of said semiconductor substrate;
- wherein a silicide layer is formed in a peripheral edge portion of said back surface of said semiconductor substrate which faces said back electrode.
1 more element
Dependencies are inferred from the claim text.