Semiconductor device, fabrication process, and electronic device
AssigneeSony Corporation
InventorMasaya NAGATA
Life of this patent
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Abstract
A semiconductor device is provided, including a semiconductor substrate that includes a semiconductor; an electrode layer formed above a first surface side inside the semiconductor substrate; a conductor layer formed above the electrode layer and above the first surface of the semiconductor substrate; a hole formed through the semiconductor substrate from a second surface of the semiconductor substrate to the conductor layer; and a wiring layer that is electrically connected to the electrode layer via the conductor layer at an end portion of the vertical hole, and that extends to the second surface of the semiconductor substrate, the wiring layer being physically separated from the electrode layer by an insulating layer disposed therebetween.
Claims16
A semiconductor device, comprising:
- a semiconductor substrate that includes a semiconductor;
- an electrode layer formed above a first surface side inside the semiconductor substrate;
- a conductor layer formed above the electrode layer and above the first surface of the semiconductor substrate;
- a hole formed through the semiconductor substrate from a second surface of the semiconductor substrate to the conductor layer;
- and
- a wiring layer that is electrically connected to the electrode layer via the conductor layer at an end portion of the vertical hole, and that extends to the second surface of the semiconductor substrate, the wiring layer being physically separated from the electrode layer by an insulating layer disposed therebetween.
Dependencies are inferred from the claim text.