Semiconductor arrangement and formatin thereof

Abstract

A semiconductor arrangement and methods of formation are provided. The semiconductor arrangement includes conductive lines having sidewalls angled between about 45° to about 90° relative to a plane in which bottom surfaces of the conductive lines lie. A dielectric layer is formed over the conductive lines, where forming the dielectric layer after the conductive lines are formed mitigates damage to the dielectric layer, such as by not subjecting the dielectric layer to etching. The angled sidewalls of the conductive lines cause the dielectric layer to pinch off before an area between adjacent conductive lines is filled, thus establishing an air gap between adjacent conductive lines, where the air gap has a lower dielectric constant than the dielectric material. At least one of the substantially undamaged dielectric layer or the air gap serves to reduce parasitic capacitance within the semiconductor arrangement, which improves performance.

Dependencies are inferred from the claim text.