Through substrate via (tsuv) structures and method of making the same
OwnerValery Dubininventor
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Abstract
Through substrate via (TSuV) structures and method of making the same are disclosed herein. In embodiments, TSuV structures are metal filled selectively to avoid forming significant metal overburden on non-via surfaces of the substrate. In certain embodiments, post-fill metal removal/planarization operations are eliminated for reduced process complexity and manufacturing cost. In embodiments, selective metal fill entails selective electroless or electrolytic deposition. Both front side and back side selective deposition methods are described along with features of through substrate via structures made with such methods.
Claims14
A microelectronic device, comprising:
- a substrate;
- a through substrate via (TSuV) extending through the substrate;
- a dielectric liner disposed over a sidewall of the TSuV and substrate surface;
- and
- a via metal disposed in the via, wherein the via metal is in direct contact with the dielectric liner, and wherein the via metal is of homogenous composition across the diameter of the TSuV.
Dependencies are inferred from the claim text.