Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device
AssigneeInfineon Technologies Austria AG
InventorsAnton Mauder, Franz Hirler, Armin Willmeroth, Michael Rueb, Holger Kapels
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Abstract
A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.
Claims19
A semiconductor device with a charge carrier compensation structure in a semiconductor body comprising:
- a substrate;
- a cell field comprising drift zones and charge carrier compensation zones, wherein the drift zones comprise a first type of conductivity and the charge carrier compensation zones comprise a second type of conductivity complementary to the first type of conductivity, and
- an edge region which surrounds the cell field;
- wherein the edge region comprises:
- a near-surface area which is undoped to more weakly doped than the drift zones,
- at least one buried, vertically extending, zone positioned beneath the near-surface area, the buried, vertically extending zone comprising the second type of conductivity,
- a layer forming a lateral buried field stop zone positioned above an upper side of the substrate, wherein the lateral buried field stop zone has a dopant concentration of the first conductivity type which is lower than the dopant concentration of layers of the drift zones.
A method for the production of a semiconductor device by using a multi-epitaxy process, the method comprising:
- forming a first epitaxy layer using first ion implantation masks which have first structures;
- forming at least one further epitaxy layer using second ion implantation masks which have first structures;
- wherein an edge region with buried charge carrier compensation zones is produced in the first epitaxy layer and an edge region with an undoped or weakly doped region is produced in at least one epitaxy layer.
Dependencies are inferred from the claim text.