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US 2014/0231964 A1Published application
Multiple Layer Substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLong-Shih Lin, Fu-Hsiung Yang, Kun-Ming Huang, Ming-Yi Lin, Paul Chu
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Abstract
A substrate for an integrated circuit includes a device wafer having a raw carrier concentration and an epitaxial layer disposed over the device wafer. The epitaxial layer has a first carrier concentration. The first carrier concentration is higher than the raw carrier concentration.
Claims20
A substrate for an integrated circuit, comprising:
- a device wafer having a raw carrier concentration;
- and
- a first epitaxial layer disposed over the device wafer, the first epitaxial layer having a first carrier concentration,
- wherein the first carrier concentration is higher than the raw carrier concentration.
1 more element
A method of fabricating a substrate for an integrated circuit, comprising:
- providing a device wafer;
- and
- forming a first epitaxial layer over the device wafer, wherein the device wafer has a raw carrier concentration, the first epitaxial layer has a first carrier concentration, and the first carrier concentration is higher than the raw carrier concentration.
An integrated circuit having a substrate, the substrate comprising:
- a device wafer having a raw carrier concentration and comprising silicon;
- and
- a first epitaxial layer disposed over the device wafer, the first epitaxial layer having a first carrier concentration,
- wherein the first carrier concentration ranges from 1.25 to 2.25 times the raw carrier concentration and the first epitaxial layer comprises silicon and dopants.
1 more element
Dependencies are inferred from the claim text.