Process of Ultra Thick Trench Etch with Multi-Slope Profile
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hung Hsueh, Wei-Te Wang, Shao-Yu Chen, Chun-Liang Fan, Kuan-Chi Tsai
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hung Hsueh, Wei-Te Wang, Shao-Yu Chen, Chun-Liang Fan, Kuan-Chi Tsai
Estimating the term…
The present disclosure relates to an integrated chip (IC) having an ultra-thick metal layer formed in a metal layer trench having a rounded shape that reduces stress between an inter-level dielectric (ILD) layer and an adjacent metal layer, and a related method of formation. In some embodiments, the IC has an inter-level dielectric layer disposed above a semiconductor substrate. The ILD layer has a cavity with a sidewall having a plurality of sections, wherein respective sections have different slopes that cause the cavity to have a rounded shape. A metal layer is disposed within the cavity. The rounded shape of the cavity reduces stress between the ILD layer and the metal layer to prevent cracks from forming along an interface between the ILD layer and the metal layer.
An integrated chip (IC) having an ultra-thick metal layer, comprising:
An integrated chip (IC) having an ultra-thick copper metal layer, comprising:
A method of forming an ultra-thick metal layer, comprising:
Dependencies are inferred from the claim text.