Production of high-performance passive devices using existing operations of a semiconductor process

A capacitor formed using a semiconductor process, the capacitor comprising:

• an N-type silicon region disposed in a P-type silicon substrate;
• a field oxide (FOX) layer disposed in the P-type substrate, the FOX layer including an opening exposing at least a portion of the N-type silicon region;
• a reduced surface field (RESURF) oxide (ROX) layer disposed on the exposed N-type silicon region, the ROX layer including a first dielectric layer disposed on the exposed N-type silicon region and a second dielectric layer disposed on the first dielectric layer;
• and
• a doped polysilicon layer disposed on the ROX layer.

A resistor structure formed using a semiconductor process, the resistor structure comprising:

• a silicon substrate;
• a field oxide (FOX) layer disposed on the silicon substrate;
• a reduced surface field (RESURF) oxide (ROX) layer disposed on the FOX layer, the ROX layer including a first dielectric layer disposed on the FOX layer and a second dielectric layer disposed on the first dielectric layer;
• and
• a doped polysilicon resistor disposed on the ROX layer.