Image sensor for mitigating dark current

A method for mitigating dark current of an image sensor, comprising:

• forming a first region comprising a first doping type;
• forming a second region surrounding the first region, the second region comprising a second doping type, the second doping type opposite of the first doping type;
• and
• forming a surface protect region adjacent to at least one of a silicon interface or the second region, the surface protect region comprising the first doping type, thus mitigating dark current.

An image sensor for mitigating dark current, comprising:

• a first region comprising a first doping type;
• a second region comprising a second doping type, the second doping type opposite of the first doping type, the first region surrounded by the second region;
• a first silicon interface comprising an edge between the first region and a dielectric region, the first silicon interface located on a front side of the second region;
• a second silicon interface comprising an edge between a back side interface (BSI) region and a pass region, the second silicon interface located on a back side of the second region;
• a first surface protect region comprising the first doping type, the first surface protect region adjacent to at least one of the first silicon interface or the second region;
• and
• a second surface protect region comprising the first doping type, the second surface protect region adjacent to at least one of the second silicon interface or the second region, thus mitigating dark current.