Magnetoresistive structures, memory devices including the same, and methods of manufacturing the magnetoresistive structures and the memory devices

A magnetoresistive structure, comprising:

• a plurality of free layers each having a magnetization direction that is changeable;
• a pinned layer shared by at least two of the plurality of free layers, wherein the pinned layer has a magnetization direction that is fixed;
• and
• at least one separation layer between the plurality of free layers and the pinned layer.

A magnetoresistive structure, comprising:

• a stacked structure including a separation layer and a pinned layer, sequentially stacked, wherein the pinned layer has a magnetization direction that is fixed;
• and
• a plurality of free layers under the stacked structure, the plurality of free layers each having a magnetization direction that is changeable,
• wherein the plurality of free layers are each coupled with the pinned layer via the separation layer.