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US 2014/0231940 A1Published application
Stt-mram design enhanced by switching current induced magnetic field
AssigneeQUALCOMM Incorporated
InventorsWilliam H. Xia, Wenqing Wu, Kendrick H. Yuen, Abhishek Banerjee, Xia Li, Seung H. Kang, Jung Pill Kim
Life of this patent
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Abstract
A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.
Claims20
A memory cell, comprising:
- a plurality of magnetic tunnel junction (MTJ) layers, the plurality of MTJ layers including a fixed layer, a free layer and a barrier layer between the fixed layer and the free layer,
- a first electrode coupled to a first one of the plurality of MTJ layers, the first electrode including a first elongated portion extending laterally away from the plurality of MTJ layers, the first elongated portion configured to direct a first portion of a magnetic field induced by an MTJ switching current through the plurality of MTJ layers;
- and
- a second electrode coupled to a second one of the plurality of MTJ layers, the second electrode including a second elongated portion extending laterally away from the plurality of MTJ layers, the second elongated portion configured to direct a second portion of the magnetic field induced by the MTJ switching current through the plurality of MTJ layers, the second portion of the magnetic field adding with the first portion of the magnetic field to enhance the magnetic field through the plurality of MTJ layers.
1 more element
A method of constructing a magnetic memory cell comprising:
- patterning a first electrode;
- fabricating a magnetic tunnel junction (MTJ) on the first electrode so that the first electrode has a first elongated portion extending laterally away from the MTJ;
- patterning a second electrode on the MTJ so that the second electrode has a second elongated portion extending laterally away from the MTJ;
- and
- configuring the first elongated portion and the second elongated portion to direct mutually additive portions of a switching current induced magnetic field through the MTJ.
2 more elements
An apparatus, comprising:
- means for magnetically storing charge having a plurality of layers, the plurality of layers including a fixed layer, a free layer and a barrier layer between the fixed layer and the free layer,
- a first means for conducting coupled to a first one of the plurality of layers of the means for magnetically storing charge, the first means for conducting including a first means for directing a magnetic field that extends laterally away from the means for magnetically storing charge, the first means for directing the magnetic field is configured to direct a first portion of a magnetic field induced by a switching current through the means for magnetically storing charge;
- and
- a second means for conducting coupled to a second one of the plurality of layers of the means for magnetically storing charge, the second means for conducting including a second means for directing a magnetic field that extends laterally away from the means for magnetically storing charge, the second means for directing the magnetic field configured to direct a second portion of the magnetic field induced by the switching current through the means for magnetically storing charge, the second portion of the magnetic field adding with the first portion of the magnetic field to enhance the magnetic field through the means for magnetically storing charge.
1 more element
A method of constructing a magnetic memory cell comprising steps of:
- patterning a first electrode;
- fabricating a magnetic tunnel junction (MTJ) on the first electrode so that the first electrode has a first elongated portion extending laterally away from the MTJ;
- patterning a second electrode on the MTJ so that the second electrode has a second elongated portion extending laterally away from the MTJ;
- and
- configuring the first elongated portion and the second elongated portion to direct mutually additive portions of a switching current induced magnetic field through the MTJ.
2 more elements
Dependencies are inferred from the claim text.