Methods and Apparatus of Metal Gate Transistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Yu Chiang, Kuang-Hsin Chen, Bor-Zen Tien, Tzong-Sheng Chang
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Abstract
Methods and devices for forming a contact over a metal gate for a transistor are provided. The device may comprise an active area, an isolation area surrounding the active area, and a metal gate above the isolation area, wherein the metal gate comprises a conductive layer. The contact comprises a first contact part within the conductive layer, above the isolation area without vertically overlapping the active area, and a second contact part above the first contact part, connected to the first contact part, and substantially vertically contained within the first contact part.
Claims20
A semiconductor device comprising:
- an isolation area surrounding an active area;
- a metal gate disposed over the active area and extending above the isolation area, wherein the metal gate comprises a conductive layer;
- and
- a contact over the metal gate, wherein the contact comprises:
- a first contact part formed within the conductive layer, above the isolation area without vertically overlapping the active area;
- and
- a second contact part above the first contact part, the second contact part substantially vertically contained within the first contact part.
A method of manufacturing a device, comprising:
- providing a first device with an isolation area, an active area next to the isolation area, a metal gate above the isolation area and the active area, and a dielectric layer above the metal gate;
- forming a first opening within the metal gate, and a second opening within the dielectric layer, wherein the first opening and the second opening are connected, and are of a first shape;
- expanding the first opening to form a third opening within the metal gate, wherein the third opening is of a second shape and beneath the dielectric layer, and
- forming a first contact part by filling the third opening within the metal gate, and forming a second contact part by filling the second opening, wherein the first contact part is connected to the second contact part.
A device comprising:
- a metal gate over a substrate, the metal gate comprising a conductive layer;
- a contact over the metal gate, wherein the contact comprises a first contact part and a second contact part, the first contact part is within the conductive layer, the second contact part is above the first contact part, connected to the first contact part, and no edge of a projected image of the second contact part intersects with an edge of the first contact part;
- and
- an isolation area underlying a portion of the metal gate, vertically below the first contact part.
Dependencies are inferred from the claim text.