In-situ nitridation of gate dielectric for semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLiang-Chen Chi, Chia-Ming Tsai, Yu-Min Chang, Chin-Kun Wang, Miin-Jang Chen, Li-Tien Huang
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Abstract
A semiconductor substructure with improved performance and a method of forming the same is described. The semiconductor substructure includes a dielectric film over a substrate, the dielectric film including at least one metal dielectric layer, at least one oxygen-donor layer, and at least one nitride-incorporation layer.
Claims28
A method for forming a semiconductor substructure, comprising:
- providing a semiconductor substrate;
- and
- forming a continuous dielectric film over said semiconductor substrate comprising:
- depositing at least one metal dielectric layer over the substrate,
- depositing at least one oxygen-donor layer over the substrate, and
- depositing at least two intermittent nitride-incorporation layers over the substrate, wherein each of said metal dielectric layer, oxygen donor layer, and nitride incorporation layers comprise monolayers and wherein at least one of said nitride-incorporation layers is deposited before at least one of said at least one metal dielectric layer or at least one of said at least one oxygen-donor layer.
A method for forming a semiconductor substructure, said method comprising:
- providing a semiconductor substrate comprising an oxide layer on an upper surface of said semiconductor substrate;
- forming a continuous dielectric film over said oxide layer by repeating a cycle comprising:
- depositing at least one metal dielectric layer over said oxide layer,
- depositing at least one oxygen-donor layer over said oxide layer, and
- depositing at least two intermittent nitride-incorporation layers over said oxide layer, wherein a first one of the nitride-incorporation layers is deposited before at least one of the first metal dielectric layer or the first oxygen-donor layer;
- and
- forming a gate electrode over said dielectric film.
(canceled)
A semiconductor substructure comprising
- a substrate;
- an oxide layer over said substrate;
- and
- a continuous dielectric film over said oxide layer, said continuous dielectric film comprising:
- at least one metal dielectric layer,
- at least one oxygen-donor layer, and
- at least one nitride-incorporation layer.
A method for forming a semiconductor substructure, comprising:
- providing a semiconductor substrate;
- forming a continuous dielectric film over said semiconductor substrate comprising:
- depositing a metal dielectric layer over the substrate,
- depositing an oxygen-donor layer over the substrate,
- depositing a nitride-incorporation layer over the substrate, and
- repeating each of said depositing steps at least once, wherein at least one of said at least one nitride-incorporation layers is deposited before at least one of said at least one metal dielectric layer or at least one of said at least one oxygen-donor layer.
Dependencies are inferred from the claim text.