Manufacturing a Super Junction Semiconductor Device and Semiconductor Device

A method of manufacturing a super junction semiconductor device, the method comprising:

• forming columnar first and second super junction regions of opposite conductivity types in a semiconductor substrate with a process surface, the first and second super junction regions extending in a direction perpendicular to the process surface and forming a super junction structure;
• thinning the semiconductor substrate from the process surface to obtain, from the semiconductor substrate, a single crystalline semiconductor portion with a first surface and a second surface parallel to the first surface such that a distance between the first super junction regions having the second conductivity type and the second surface does not exceed 30 μm;
• and
• introducing, into the second surface, impurities of a first conductivity type to form a doped layer between the super junction structure and the second surface at least in a cell area.