High Voltage Transistor Structure and Method

A device comprising:

• a first transistor comprising:
• a first source formed in a first double diffused region, wherein the first double diffused region is formed in a first well over a substrate;
• a shared drain formed in a second double diffused region, wherein the second double diffused region is formed in the first well;
• and
• a first gate structure comprising a first gate electrode formed between the first source and the shared drain, a first spacer formed between the first source and the first gate electrode and a second spacer on an opposite side of the first spacer, wherein a first oxide layer formed between the second spacer and the shared drain;
• and
• a second transistor comprising:
• a second source formed in a third double diffused region, wherein the third double diffused region is formed in the first well;
• the shared drain;
• and
• a second gate structure comprising a second gate electrode formed between the second source and the shared drain, a third spacer formed between the second source and the second gate electrode and a fourth spacer on an opposite side of the third spacer, wherein a second oxide layer formed between the fourth spacer and the shared drain.

An apparatus comprising:

• a first well region with a second conductivity type formed over a substrate with a first conductivity type;
• a first double diffused region with the first conductivity type formed in the first well region;
• a second double diffused region with the first conductivity type formed in the first well region;
• a first gate formed over the first well region, wherein the first gate is between the first double diffused region and the second double diffused region;
• a first spacer formed on a first side of the first gate;
• a second spacer formed on a second side of the first gate, wherein the first side and the second side are opposing sides of the first gate;
• a first drain/source region with the first conductivity type formed in the first double diffused region;
• and
• a second drain/source region with the first conductivity type formed in the second double diffused region.