Back to results
US 2014/0231906 A1Published application
Semiconductor Device
AssigneeRohm Co., Ltd.
InventorMasaru Takaishi
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor device in which on-resistance is largely reduced. In a region (2a) of an N type epitaxial layer (2) of the semiconductor device 20, each region between neighboring trenches (3) is blocked with a depletion layer (14) formed around a trench (3) so that a current passage (12) is interrupted, while a part of the depletion layer (14) formed around the trench (3) is deleted so that the current passage (12) is opened. In a region (2b), a junction portion (8) between the N type epitaxial layer (2) and a P+ type diffusion region (7) makes a Zener diode (8).
Claims13
1-27. (canceled)
A semiconductor device comprising:
- a silicon substrate of one conductivity type;
- an epitaxial layer of the one conductivity type provided on the silicon substrate;
- a first region of an inverse conductivity type provided on the silicon substrate so as to be contiguous with the epitaxial layer and the silicon substrate;
- and
- a plurality of switching devices provided in the epitaxial layer,
- wherein a first diffusion region of the one conductivity type electrically connected to the epitaxial layer is formed in an upper region within the first region opposite from the silicon substrate.
3 more elements
Dependencies are inferred from the claim text.