Monolithic MOSFET and Schottky Diode for Mobile Phone Boost Converter

A monolithic semiconductor device, comprising:

• a substrate;
• a well region formed over the substrate;
• a body formed in the well region;
• a first semiconductor region including a first conductivity type disposed in the body, the first semiconductor region being coupled to a first terminal of the monolithic semiconductor device operating at a first potential;
• a second semiconductor region including the first conductivity type disposed in the well region adjacent to the body, the second semiconductor region being coupled to a second terminal of the monolithic semiconductor device operating at a second potential;
• a third semiconductor region including the first conductivity type disposed in the well region, the third semiconductor region being coupled to a third terminal of the monolithic semiconductor device operating at a third potential which is different than the first and second operating potentials;
• and
• a first metal layer formed over the third semiconductor region and electrically connected to the second terminal of the monolithic semiconductor device.

A monolithic semiconductor device, comprising:

• a metal oxide semiconductor field effect transistor (MOSFET) formed on the monolithic semiconductor device, the MOSFET including a drain region and source region separated by a gate region, the drain region being coupled to a first terminal of the monolithic semiconductor device operating at a first potential, the source region being coupled to a second terminal of the monolithic semiconductor device operating at a second potential which is less than the first potential;
• a first diode including a cathode coupled to the drain region and anode coupled to the source region;
• and
• a second diode formed on the surface of the monolithic semiconductor device, the second diode including an anode coupled to the first terminal of the monolithic semiconductor device and a cathode coupled to a third terminal of the monolithic semiconductor device operating at a third potential which is different than the first and second operating potentials.