Nonvolatile semiconductor memory device

A nonvolatile semiconductor memory device, comprising:

• a semiconductor layer;
• a control gate electrode;
• and
• an organic molecular layer formed between the semiconductor layer and the control gate electrode, the organic molecular layer having first organic molecules and second organic molecules, the first organic molecule having a first alkyl chain or a first alkyl halide chain on the semiconductor layer side and a charge trapping unit on the control gate electrode side, and the second organic molecule having a second alkyl chain or a second alkyl halide chain on the semiconductor layer side and a hydroxy group, an ether group, a carboxyl group or an ester group on the control gate electrode.

A nonvolatile semiconductor memory device, comprising:

• a stacked structure having insulating layers and control gate electrode layers, the insulating layers and the control gate electrode layers being alternately stacked;
• a block insulating layer provided on the side surface of a hole penetrating the stacked structure from its top surface to the lowermost control gate electrode layer with respect to a stacking direction of the stacked structure;
• an organic molecular layer formed on the inner surface of the block insulating layer, the organic molecular layer having first organic molecules and second organic molecules, the first organic molecule having a first alkyl chain or a first alkyl halide chain on the block insulating layer side and a charge trapping unit on the opposite side to the block insulating layer, and the second organic molecule having a second alkyl chain or a second alkyl halide chain on the block insulating layer side and a hydroxy group, an ether group, a carboxyl group or an ester group on the opposite side to the block insulating layer;
• a tunnel insulating layer provided on the inner surface of the organic molecular layer;
• and
• a semiconductor layer provided on the inner surface of the tunnel insulating layer.