One-Time Programming Device and a Semiconductor Device
AssigneeInfineon Technologies AG
InventorHubert Rothleitner
Life of this patent
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Abstract
A one-time programming device includes a field effect semiconductor transistor with a gate or a channel region of the field effect semiconductor transistor including a shape of a footprint so that in an on-state of the field effect semiconductor transistor a critical electrical field is reached within an area of the channel region, a bulk region or a drain region of the field effect semiconductor transistor due to the shape of the footprint resulting in a damage of a p-n junction between the channel region or the bulk region and the drain region of the field effect semiconductor transistor or resulting in a damage of a gate insulation of the field effect semiconductor transistor after a predetermined programming time.
Claims19
A one time programming device comprising a field effect semiconductor transistor, wherein a gate or a channel region of the field effect semiconductor transistor comprises a shape of a footprint so that in an on-state of the field effect semiconductor transistor a critical electrical field is reached within an area of the channel region, a bulk region or a drain region of the field effect semiconductor transistor due to the shape of the footprint resulting in a damage of a p-n-junction between the channel region or the bulk region and the drain region of the field effect semiconductor transistor or resulting in a damage of a gate insulation of the field effect semiconductor transistor after a predefined programming time.
A one time programming device comprising a field effect semiconductor transistor, wherein the field effect semiconductor transistor is constructed so that in an on-state of the field effect semiconductor transistor a critical electrical field is reached within an area of a channel region, a bulk region or a drain region of the field effect semiconductor transistor resulting in a damage of a pn-junction between the channel region or the bulk region and the drain region of the field effect semiconductor transistor after a predefined programming time.
A semiconductor device comprising at least one standard field effect semiconductor transistor providing a stable transistor functionality and an array of one time programming devices each comprising a field effect semiconductor transistor manufactured on a common semiconductor die, wherein the field effect semiconductor transistor of each one time programming device comprises:
- a source region comprising a first conductivity type;
- a drain region comprising the first conductivity type;
- a channel region arranged between the source region and the drain region and a bulk region comprising a second conductivity type so that a p-n-junction is formed between the bulk region and the source region and between the bulk region and the drain region;
- and
- a gate arranged on top of the channel region, wherein the gate is electrically insulated from the channel region by a gate insulation between the gate and the channel region,
- wherein the gate of the field effect semiconductor transistor comprises a notch at an edge of the gate facing the drain resulting in a channel length of the field effect semiconductor transistor varying over a channel width of the field effect semiconductor transistor so that in an on-state of the field effect semiconductor transistor a critical electrical field is reached within an area of the channel region, the bulk region or the drain region of the field effect semiconductor transistor resulting in a damage of a p-n-junction between the channel region or the bulk region and the drain region of the field effect semiconductor transistor or resulting in a damage of the gate insulation of the field effect semiconductor transistor after a predefined programming time,
- wherein a bulk connection of the standard field effect semiconductor transistor and a bulk connection of the field effect semiconductor transistor of the one time programming device are constructed so that the standard field effect semiconductor transistor comprises at least a 10 times lower minimal resistance to a bulk contact than the field effect semiconductor transistor of the respective one time programming device.
Dependencies are inferred from the claim text.