Method of forming a dram array of devices with vertically integrated recessed access device and digitline
AssigneeMicron Technology, Inc.
InventorsKunal Parekh, Ceredig Roberts, Thy Tran, Jim Jozwiak, David Hwang
Life of this patent
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Abstract
A method is disclosed for forming a memory device having buried access lines (e.g., wordlines) and buried data/sense lines (e.g., digitlines) disposed below vertical cell contacts. The buried wordlines may be formed trenches in a substrate extending in a first direction, and the buried digitlines may be formed from trenches in a substrate extending in a second direction perpendicular to the first direction. The buried digitlines may be coupled to a silicon sidewall by a digitline contact disposed between the digitlines and the silicon substrate.
Claims20
A device, comprising:
- a substrate;
- a wordline trench formed in the substrate;
- and
- a digitline trench formed in the substrate, wherein the digitline trench is substantially perpendicular to the wordline trench and formed substantially beneath the wordline trench, and wherein the wordline trench and the digitline trench are each formed below a surface of the substrate.
A method of manufacturing a device, comprising:
- forming an access line trench recessed below a surface of a substrate;
- forming a data line trench recessed below the access line trench, wherein the data line trench extends along one or more directions perpendicular to the access line trench, and wherein an intersection of the access line trench and the data line trench forms a plurality of pillars extending from the substrate;
- forming a word line inside the access line trench;
- forming a data line inside the data line trench;
- and
- forming a contact with an upper portion of each of the plurality of pillars.
A memory device, comprising:
- a plurality of wordline trenches extending along a first path at a first depth below an upper surface of a substrate;
- a plurality of digitline trenches extending along a second path at a second depth below the upper surface of the substrate, wherein the first path is substantially perpendicular to the second path, and wherein the second depth is greater than the first depth;
- and
- a plurality of cell contacts formed vertically above the plurality of wordline trenches and the plurality of digitline trenches, wherein the plurality of cell contacts is configured to electrically couple to the substrate.
Dependencies are inferred from the claim text.