Capacitor and preparation method thereof

Abstract

A capacitor and a method of fabricating thereof are provided. A structure of low pressure tetraethyl orthosilicate-low pressure silicon nitride-low pressure tetraethyl orthosilicate is used in the capacitor to replace the oxide-nitride-oxide structure of the existing capacitor; the capacitor has a relatively high unit capacitance value. Furthermore, the structure of low pressure tetraethyl orthosilicate—low pressure silicon nitride—low pressure tetraethyl orthosilicate is fabricaited by low pressure chemical vapor deposition method at relatively low temperature; thus the heat produced in the whole process is relatively low, which is insufficient to make the semiconductor device shift or make the gate metal layer or the metallized silicon layer peel off. Accordingly, the capacitor and the method of fabricating the capacitor of the present invention can be well applied in the process of the 0.5 μm PIP capacitor or below 0.5 μm.

Dependencies are inferred from the claim text.