Mim capacitor in finfet structure

A FinFET structure comprising:

• silicon fins on a semiconductor substrate, each silicon fin having two sides and a horizontal surface;
• a metal-insulator-metal capacitor on the sides and horizontal surface of the silicon fins comprising sequential layers of a first layer of titanium nitride, a dielectric layer and a second layer of titanium nitride on the sides and horizontal surface of the silicon fins;
• a polysilicon gate layer over the second layer of titanium nitride on the silicon fins and over the semiconductor substrate such that first and second ends of the silicon fins protrude from the polysilicon layer such that the first and second ends of the silicon fins that protrude from the polysilicon gate layer are devoid of the sequential layers of the first layer of titanium nitride, the dielectric layer and the second layer of titanium nitride, the polysilicon gate layer having a surface that faces each of the first and second ends of the silicon fins;
• a spacer over each of the two surfaces and a portion of the first and second ends of the silicon fins such that the first and second ends of the silicon fins protrude from the spacers;
• and epitaxial silicon over the first and second ends of the silicon fins to form sources and drains.