Mim capacitor in finfet structure

A method of forming a FinFET structure comprising:

• forming silicon fins on a semiconductor substrate, each silicon fin having two sides and a horizontal surface;
• depositing sequential layers of a first layer of titanium nitride, a dielectric layer and a second layer of titanium nitride on the sides and horizontal surface of the silicon fins;
• depositing a polysilicon layer over the second layer of titanium nitride on the silicon fins and over the semiconductor substrate;
• selectively etching the polysilicon layer and the sequential layers of first layer of titanium nitride, dielectric layer and second layer of titanium nitride from a first end and a second end of the silicon fins so that the first and second ends of the silicon fins protrude from the polysilicon layer, the polysilicon layer having a surface that faces each of the first and second ends of the silicon fins;
• forming a spacer over each of the two surfaces and a portion of the first and second ends of the silicon fins such that the first and second ends of the silicon fins protrude from the spacers;
• forming epitaxial silicon over the first and second ends of the silicon fins to form sources and drains,
• wherein the combination of the first layer of titanium nitride, dielectric layer and second layer of titanium nitride forms a metal-insulator-metal capacitor situated between each silicon fin and the polysilicon layer.