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US 2014/0231883 A1Published application
Vertical JFET with Integrated Body Diode
AssigneeInfineon Technologies Austria AG
InventorsRomain Esteve, Cédric Ouvrard
Life of this patent
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Abstract
A vertical junction field effect transistor (JFET) includes a drain, a source, a gate, a drift region, and a body diode. The source, gate, drift region, and body diode are all disposed in the same compound semiconductor epitaxial layer. The drain is vertically spaced apart from the source and the gate by the drift region. The body diode is connected between the drain and the source.
Claims23
A vertical junction field effect transistor (JFET), comprising:
- a drain;
- and
- a source, a gate, a drift region, and a body diode all disposed in the same compound semiconductor epitaxial layer,
- wherein the drain is vertically spaced apart from the source and the gate by the drift region, and the body diode is connected between the drain and the source.
1 more element
A semiconductor device, comprising:
- an n-type substrate;
- and
- a compound semiconductor epitaxial layer on the n-type substrate, the compound semiconductor epitaxial layer comprising:
- a first n-type region on the n-type substrate;
- a second n-type region on the first n-type region, the second n-type region being more heavily doped than the first n-type region and having a recessed part and a non-recessed part;
- a third n-type region on the non-recessed part of the second n-type region, the third n-type region being more heavily doped than the second n-type region;
- a first p-type region extending through the third n-type region into the non-recessed part of the second n-type region;
- and
- a second p-type region in the recessed part of the second n-type region and laterally spaced apart from the first p-type region by part of the second n-type region.
6 more elements
A method of manufacturing a vertical junction field effect transistor (JFET), the method comprising:
- forming a drain in a semiconductor substrate;
- forming a compound semiconductor epitaxial layer on the semiconductor substrate;
- and
- forming a source, a gate, a drift region, and a body diode all in the same compound semiconductor epitaxial layer, the drain being vertically spaced apart from the source and the gate by the drift region, the body diode being connected between the drain and the source.
1 more element
Dependencies are inferred from the claim text.